Virtual Booth

In this study, we investigate the porous GaN prepared using low temperature direct current photoelectrochemical etching, which is a novel approach to our research. We tailored the etching durations and compared them to the as grown GaN. This work obtained the enhancement in the structural and optical characteristics of the samples compared to as grown sample utilizing 4% KOH electrolyte, 30 mA current, and 100 W of UV light. The findings include morphological properties via Field Emission Scanning Electron Microscopy, structural properties via X-ray diffraction, and optical properties by photoluminescence spectroscopy. All of the findings will be revealed in the video.